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| S T M6926 S amHop Microelectronics C orp. Mar.29 ,2007 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m i ) Max ID 8.5A R DS (ON) S uper high dense cell design for low R DS (ON). R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 16 @ V G S = 10V 18 @ V G S = 4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C IDM IS PD Ta=70 C TJ, TS TG ID Limit 40 20 8.5 7 32 1.7 2 1.44 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 62.5 C /W STM6926 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS=0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID= 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS= 10V, VGS= 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 10 1 1.7 12 14 20 25 1500 220 145 23 22 88 27 28 12 3 6 3 V uA uA V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 16 m ohm 18 m ohm A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS=20V, VGS= 0V f =1.0MHZ PF PF PF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd 2 VDD = 15V ID = 1A VGS = 10V RGEN= 6 ohm VDS =15V, ID = 10A,VGS =10V VDS =15V, ID = 10A,VGS =4.5V VDS =15V, ID = 10A VGS =10V ns ns ns ns nC nC nC nC S T M6926 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.73 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 60 V G S =4V 50 VGS=4.5 V 40 30 20 10 V G S =2.5V VGS=10V 20 T j =125 C ID, Drain C urrent(A) ID, Drain C urrent (A) 15 -55 C 10 25 C V G S =3V 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 24 1.75 Figure 2. Transfer Characteristics RDS(ON), On-Resistance Normalized 20 1.60 1.45 1.30 1.15 1.0 0 VGS=10V ID=10A RDS(on) (m ) i 16 12 V G S =4.5V V G S =10V 8 4 1 1 VGS=4.5V ID=6A 5 10 15 20 25 30 0 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 S T M6926 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 36 20.0 ID=10A 30 Is , S ource-drain current (A) R DS (on) (m ) i 10.0 25 C 24 125 C 18 12 75 C 6 0 25 C 125 C 75 C 1.0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM6926 2400 10 VGS, Gate to Source Voltage (V) 2000 8 6 4 2 0 VDS=15V ID=10A C , C apacitance (pF ) 1600 1200 800 400 C rs s 0 0 5 10 15 C os s C is s 6 20 25 30 0 3 6 9 12 15 18 21 24 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance 600 Tr Figure 10. Gate Charge 50 10 ID, Drain Current (A) (O N) Lim it Switching Time (ns) 100 60 10 TD(off) Tf TD(on) 10 RD S 10 ms 0m s 1 DC 1s 1 1 V DS =15V ,ID=1A V G S =10V 0.1 0.03 VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 6 10 60 100 300 600 Rg, Gate Resistance () VDS, Drain-Source Voltage (V) Figure 11.switching characteristics 9 Figure 12. Maximum Safe Operating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 t2 1. RthJA (t)=r (t) * R JAth 2. R th JA=See Datasheet 3. TJM-TA = PDM* R JA th (t) 4. Duty Cycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STM6926 PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A 0.008TYP. e 0.05 TYP. B 0.016 TYP. A1 C H MILLIMETERS SYMBOLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INCHES MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 6 STM6926 SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PACKAGE SOP 8N 150 A0 6.40 B0 5.20 K0 2.10 D0 1.5 (MIN) D1 E E1 1.75 E2 5.5 0.05 P0 8.0 P1 4.0 P2 2.0 0.05 T 0.3 0.05 1.5 + 0.1 - 0.0 12.0 0.3 SO-8 Reel UNIT: TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W W1 H K S 2.0 0.15 G R V 12.4+ 0.2 16.8- 0.4 12.75 + 0.15 7 |
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